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| DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product specification 2003 Jul 22 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to reduced heat generation * Reduced printed-circuit board requirements. APPLICATIONS * Power management: - DC-DC converter - Supply line switching - Battery charger - LCD backlighting. * Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage PBSS2540M QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A m 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. MARKING TYPE NUMBER PBSS2540M MARKING CODE DC 2 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. 2003 Jul 22 2 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT883 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; notes 1 and 2 Tamb 25 C; note 1 and 3 CONDITIONS open emitter open base open collector notes 1 and 2 - - - - - - - - -65 - -65 MIN. PBSS2540M MAX. 40 40 6 500 1 100 250 430 +150 150 +150 V V V UNIT mA A mA mW mW C C C 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; notes 1 and 2 in free air; notes 1, 3 and 4 VALUE 500 290 UNIT K/W K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 m copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering Reflow soldering is the only recommended soldering method. 2003 Jul 22 3 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA; note 1 VCE = 2 V; IC = 500 mA; note 1 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 200 mA; IB = 10 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 500 mA; IB = 50 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 VCE = 2 V; IC = 100 mA; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - 200 150 50 - - - - - - - 250 - PBSS2540M TYP. - - - - - - - - - - 380 - - 450 - MAX. 100 50 100 - - - 50 100 200 250 <500 1.2 1.1 - 6 UNIT nA A nA mV mV mV mV m V V MHz pF 2003 Jul 22 4 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M handbook, halfpage 1200 MHC082 handbook, halfpage hFE 1000 (1) 1200 VBE (mV) 1000 MHC085 800 800 600 (2) (2) (1) 600 400 (3) 200 400 (3) 0 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 VCE = 2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MHC086 handbook, halfpage 1200 MHC084 VBEsat (mV) 1000 800 102 (1) (1) (2) 600 (2) (3) 400 (3) 10 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 22 5 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M handbook, halfpage (1) (2) (3) (5) (4) (6) (8) 1200 IC (mA) 1000 MHC083 103 handbook, halfpage RCEsat () 102 MHC087 800 (7) 600 (9) (10) 10 (1) (2) (3) 400 1 200 10-1 10-1 0 0 1 2 3 4 VCE (V) Tamb = 25 C. (1) (2) (3) (4) IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. (5) (6) (7) (8) IB = 15 mA. IB = 12.5 mA. IB = 10 mA. IB = 7.5 mA. (9) IB = 5 mA. (10) IB = 2.5 mA. 5 1 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.7 Fig.6 Collector current as a function of collector-emitter voltage; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Jul 22 6 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm PBSS2540M SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2003 Jul 22 7 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS2540M This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Jul 22 8 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 750 11559 |
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